![Effect of the interfacial (low-k SiO2 vs high-k Al2O3) dielectrics on the electrical performance of a-ITZO TFT | SpringerLink Effect of the interfacial (low-k SiO2 vs high-k Al2O3) dielectrics on the electrical performance of a-ITZO TFT | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1007%2Fs13204-018-0866-x/MediaObjects/13204_2018_866_Fig1_HTML.png)
Effect of the interfacial (low-k SiO2 vs high-k Al2O3) dielectrics on the electrical performance of a-ITZO TFT | SpringerLink
![Materials | Free Full-Text | High-κ van der Waals Oxide MoO3 as Efficient Gate Dielectric for MoS2 Field-Effect Transistors Materials | Free Full-Text | High-κ van der Waals Oxide MoO3 as Efficient Gate Dielectric for MoS2 Field-Effect Transistors](https://www.mdpi.com/materials/materials-15-05859/article_deploy/html/images/materials-15-05859-g001.png)
Materials | Free Full-Text | High-κ van der Waals Oxide MoO3 as Efficient Gate Dielectric for MoS2 Field-Effect Transistors
![Table I from Metal Electrode/High-$k$ Dielectric Gate-Stack Technology for Power Management | Semantic Scholar Table I from Metal Electrode/High-$k$ Dielectric Gate-Stack Technology for Power Management | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/04b953d7b7e428afd75ae8dfd23965a60ab047d6/2-TableI-1.png)
Table I from Metal Electrode/High-$k$ Dielectric Gate-Stack Technology for Power Management | Semantic Scholar
![Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations | NPG Asia Materials Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations | NPG Asia Materials](https://media.springernature.com/lw685/springer-static/image/art%3A10.1038%2Fam.2015.57/MediaObjects/41427_2015_Article_BFam201557_Fig4_HTML.jpg)
Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations | NPG Asia Materials
![Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration | Nature Communications Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration | Nature Communications](https://media.springernature.com/full/springer-static/image/art%3A10.1038%2Fs41467-023-37887-x/MediaObjects/41467_2023_37887_Fig1_HTML.png)
Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration | Nature Communications
![Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations | NPG Asia Materials Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations | NPG Asia Materials](https://media.springernature.com/full/springer-static/image/art%3A10.1038%2Fam.2015.57/MediaObjects/41427_2015_Article_BFam201557_Fig1_HTML.jpg)
Novel high-κ dielectrics for next-generation electronic devices screened by automated ab initio calculations | NPG Asia Materials
![Extracting the relative dielectric constant for "high-kappa layers" from CV measurements - Errors and error propagation | Semantic Scholar Extracting the relative dielectric constant for "high-kappa layers" from CV measurements - Errors and error propagation | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/22fba1de7d0b11614832f93997f20391bc54aded/3-Figure2-1.png)
Extracting the relative dielectric constant for "high-kappa layers" from CV measurements - Errors and error propagation | Semantic Scholar
![Frontiers | Amalgamation of high-κ dielectrics with graphene: A catalyst in the orbit of nanoelectronics and material sciences Frontiers | Amalgamation of high-κ dielectrics with graphene: A catalyst in the orbit of nanoelectronics and material sciences](https://www.frontiersin.org/files/Articles/1064929/fphy-10-1064929-HTML/image_m/fphy-10-1064929-t001.jpg)
Frontiers | Amalgamation of high-κ dielectrics with graphene: A catalyst in the orbit of nanoelectronics and material sciences
![Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition | ACS Applied Materials & Interfaces Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition | ACS Applied Materials & Interfaces](https://pubs.acs.org/cms/10.1021/acsami.7b00538/asset/images/large/am-2017-00538w_0007.jpeg)